And higher values of energy band gap ( E g) and electron mobility enabled low on-resistance ( R ON) guarantees superior power handling capability. Ultra-wide bandgap (UWBG) high electron mobility transistors (HEMTs) are promising candidates for switching power applications owing to very-high breakdown strength of the material. To cater these ever-increasing demands, radio-frequency (RF) and microwave power amplifiers are in prime-attention, and will be constantly evaluated on price versus performance metrics. In the current scenario of high-speed electronics technology, many application areas-broadband Internet access, fifth-generation (4G/5G) mobile systems, and cutting-edge military applications-are realizing very-fast to reality.
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